Assistant Scientist in Physics

CNM is a U.S. Department of Energy Office of Science user facility that offers world-class expertise and state-of-the-art instrumentation to enable leading-edge research in nanoscience and nanotechnology.

We seek a highly motivated scientist to help advance CNM’s research leadership in microelectronics, with particular emphasis on device physics, transport measurements, and nanofabrication.

Areas of interest include, but are not limited to, the development of energy-efficient electronic systems through heterointegration for applications in RF electronics, power electronics, and optoelectronics.

The successful candidate will build and lead an innovative research program in microelectronics by leveraging CNM’s unique strengths in materials synthesis, device fabrication, and characterization.

This position offers the opportunity to pioneer new directions in heterointegration and electrical characterization while contributing to CNM’s mission as a national user facility.

The role also includes supporting a broad external user community by providing scientific and technical expertise for experiments and operations in CNM’s cleanroom.

Key Responsibilities

• Develop and lead a strong research program in microelectronics, with a focus on heterojunction device physics and transport measurements.
• Collaborate with scientists across CNM and Argonne to shape and execute a shared vision for microelectronics research.
• Manage, maintain, and support key cleanroom instrumentation, including electron beam lithography, plasma FIB, and related nanofabrication tools.
• Work closely with scientists and engineers from universities, national laboratories, and industry, including providing guidance and technical support to CNM users.
• Help ensure the reliable operation, and troubleshooting of cleanroom tools and electrical probe stations in partnership with CNM operations staff.

Position Requirements

• Ph.D. in Electrical Engineering, Physics, Materials Science or a related field (postdoctoral research experience will be beneficial).
• A strong background in semiconductor device physics.
• Significant hands-on experience fabricating devices based on materials such as 2D materials, ultrawide-bandgap materials, oxides, or III-V semiconductors.
• Demonstrated expertise in micro/nanofabrication and process development in cleanroom environments.
• Proficiency in device-level electrical measurements and characterization techniques.
• Experience in device modeling using COMSOL or TCAD would be beneficial.
• Ability to model Argonne’s core values of impact, safety, respect, integrity, and teamwork.

The successful candidate will be expected to make full use of CNM’s advanced capabilities and scientific expertise to develop impactful research and support the broader user community.

Application Requirements

Applicants must submit:

• Cover letter.
• Detailed curriculum vitae, including a list of publications.
• A statement on proposed research (2-page maximum).
• A 1-page statement regarding an approach to engage and grow the scientific user program.
• Names and contact information for three professional references.

Position Information

Job Family: Research Development (RD)

Job Profile: Materials/Ceramics/Metallurgical 2

Worker Type: Regular

Time Type: Full time

RD2 Qualifications: Bachelor's and 5+ years of experience, Master's and 3+ years, or Ph.D. and 0+ years, or equivalent.

Salary

The expected hiring range for this position is $94,486.00 - $147,398.94.

Please note that the pay range information is a general guideline only. The pay offered to a selected candidate will be determined based on factors such as, but not limited to, the scope and responsibilities of the position, the qualifications of the selected candidate, business considerations, internal equity, and external market pay for comparable jobs.

Additionally, comprehensive benefits are part of the total rewards package.

Click here to view Argonne employee benefits.