Rate My Professor Jeffrey McCallum

His primary research interests encompass epitaxy and defect studies in silicon, semiconductor physics, devices, and processing. This includes investigations into atomic-scale structures for quantum computers and optoelectronic devices, solid phase epitaxy mechanisms in silicon and germanium, defect formation in hyperdoped semiconductors, and spin-based sensing in diamond and silicon carbide. Key publications include 'Recent Insights into Solid Phase Epitaxy of Silicon and Germanium' (2010), 'Nanomechanical Sensing Using Spins in Diamond' (2017, Nano Letters), 'Process-induced defects in Au-hyperdoped Si photodiodes' (2019, Journal of Applied Physics), 'Photoluminescence Properties of Ion-Implanted Er3+ Defects in 4H-SiC' (2015), 'Collapse of nanocavities studied by ion-channeling and Raman spectroscopy', 'Channeling Contrast Microscopy: A Powerful Tool for Examining Semiconductor Structures', 'Er sites in Si for quantum information processing', 'All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide', and contributions to solving the placement puzzle of single phosphorus donors in silicon (2020, Nature). Previously, he served as a program manager for the Materials Program of an ARC Centre. His work advances quantum engineering, condensed matter physics, and semiconductor technologies through collaborations with national facilities like Heavy Ion Accelerators and ANSTO.